Analysis of the degradation of amorphous silicon‐based modules after 11 years of exposure by means of IEC60891:2021 procedure 3

The degradation of two amorphous silicon-based photovoltaic (PV) modules, namely, single junction silicon (a-Si) and micromorph tandem (a-Si/ μ $$ \mu -Si), after 11 years exposure in the south Spain is analyzed. Their I-V curves were measured outdoors to study changes electrical parameters course three different periods: during initial days exposure, first year, subsequent 10-year period. translation an identical set operating conditions, which enables a meaningful comparison, was done by correction procedures described standard IEC60891:2021, including procedure 3, does not require knowledge module parameters, whose values are typically available. annual power rates over entire 11-year period 1.12% for a-Si module, 3.02% 0.98% a-Si/ \upmu -Si, 2.29% year.